參數(shù)資料
型號: FDD8444L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ MOSFET
中文描述: 16 A, 40 V, 0.0107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: ROHS COMPLIANT, TO-252, D-PAK, 2 PIN
文件頁數(shù): 5/7頁
文件大?。?/td> 273K
代理商: FDD8444L
F
FDD8444L Rev A (W)
www.fairchildsemi.com
5
Figure 5. Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
C
apability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
1
10
100
0.1
1
10
100
1000
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
LIMITED
BY PACKAGE
10us
100us
1ms
10ms
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
DC
0.01
0.1
1
10
100
1000
1
10
100
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
500
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
20
40
60
80
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
1
2
3
4
5
0
50
100
150
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 3V
V
GS
= 5V
V
GS
= 4V
V
GS
= 3.5V
3
4
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
5
6
7
8
9
10
0
5
10
15
20
25
30
T
J
= 25
o
C
I
D
=
50A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
r
D
,
O
(
m
Ω
)
-80
-40
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 50A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
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