參數(shù)資料
型號： FDD8444
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mOhm
中文描述： 155 A, 40 V, 5.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： ROHS COMPIANT, TO-252, 3 PIN
文件頁數(shù)： 2/7頁
文件大小： 300K
代理商： FDD8444
F
FDD8444 Re
v A
(W)
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 32V
V
GS
= 0V
V
GS
=
±
20V
40
-
-
-
-
-
-
-
-
1
V
μ
A
I
DSS
Zero Gate Voltage Drain Current
T
J
=150°C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 50A, V
GS
= 10V
I
D
= 50A, V
GS
= 10V,
T
J
= 175°C
2
-
2.5
4
4
V
R
Drain to Source On Resistance
5.2
m
-
7.2
9.4
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
6195
585
332
1.9
89
43
11
23
11
20
8240
780
500
-
116
56
14.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 5V
V
GS
= 0 to 2V
V
DD
= 20V
I
D
= 50A
I
g
= 1.0mA
DS(ON)
Absolute Maximum Ratings
T
c
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
40
±20
155
17.5
Figure 4
535
227
1.52
-55 to +175
Units
V
V
A
A
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (V
GS
=10v) (Note1)
Continuous (V
GS
=10v,with R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Derate above 25
o
C
Operating and Storage Temperature
ID
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
0.66
52
o
C/W
o
C/W
Device Marking
FDD8444
Device
FDD8444
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
相關(guān)PDF資料
PDF描述
FDD8445_07 N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ
FDD8445 N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mOhm
FDD8447L N-Channel PowerTrench㈢ MOSFET 40V, 54A, 8.5mOhm
FDD8451 N-Channel PowerTrench MOSFET 40V, 28A, 24mOHM
FDD8453LZ Automotive Low-Cost Non-Volatile FPGA Family; Voltage: 1.2V; Grade: -5; Package: Lead-Free PQFP; Pins: 208; Temperature: AUTO; LUTs (k): 17
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD8444_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mз
FDD8444_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 50A, 5.2m??
FDD8444_F085 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8444L 功能描述:MOSFET 40V N-Ch POWERTRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8444L_F085 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*