參數(shù)資料
型號(hào)： FDD6680S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench SyncFET⑩
中文描述： 55 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 98K
代理商： FDD6680S
FDD6680S Rev D (W)
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Single Pulse, V
DD
= 15 V, I
D
=14A
245
14
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25
°
C
30
V
Breakdown Voltage Temperature
19
mV/
°
C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
500
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25
°
C
1
2
3
V
Gate Threshold Voltage
–3.3
mV/
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 12.5A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 15 V,
I
D
= 12.5 A
I
D
= 10 A
9.5
13.5
17
11
17
23
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 12.5 A
50
A
S
27
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2010
526
186
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
10
10
34
14
17
6.2
5.5
18
18
55
23
24
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 12.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
4.4
0.7
A
V
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 12.5A,
d
iF
/d
t
= 300 A/μs
I
S
= 4.4 A
I
S
= 7 A
(Note 2)
(Note 2)
0.49
0.56
20
19.7
nS
nC
(Note 3)
F
相關(guān)PDF資料
PDF描述
FDD6685 30V P-Channel PowerTrench MOSFET
FDD6688S 30V N-Channel PowerTrench SyncFET
FDD6690A N-Channel, Logic Level, PowerTrenchTM MOSFET
FDD6690 N-Channel, Logic Level, PowerTrenchTM MOSFET
FDD6696 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD6680S 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FDD6680S 制造商:Fairchild Semiconductor Corporation 功能描述:Transistors MOSFET RoHS Compliant:Yes
FDD6682 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6682_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDD6685 功能描述:MOSFET 30V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*