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參數(shù)資料
| 型號(hào)： | FDD6680 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PWM Optimized PowerTrench⑩ MOSFET |
| 中文描述： | 12 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 121K |
| 代理商： | FDD6680 |
FDD6680/FDU6680 Rev. C1(W)
Typical Characteristics
0
20
40
60
80
100
0
0.5
1.5
2
2.5
3
V
DS
, D1
I
D
,
3.0V
4.0V
V
GS
= 10.0V
3.5V
4.5V
6.0V
5.0V
0.8
1
1.2
1.4
1.6
1.8
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.5V
4.0V
5.0V
6.0V
4.5V
10.0V
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
T
J
, JUNCTION TEMPERATURE (
o
C)
25
50
75
100
125
150
R
D
,
I
D
= 12A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
0.03
2
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
8
10
R
D
,
I
D
= 6A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
15
30
45
60
75
90
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
=-55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6680_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680A_NBRZ002 | 制造商:Fairchild 功能描述:30V N-CA FET 95MO LF |
| FDD6680A_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680A_SBRZ001A | 制造商:Fairchild 功能描述:30V N-CH FET, 95 MO |
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