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參數(shù)資料
| 型號(hào)： | FDC6327 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 雙N |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 323K |
| 代理商： | FDC6327 |
F
FDC6327C, Rev. E
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
7
9
14
12
14
3
3
3.25
2.85
0.65
0.68
0.90
0.65
15
14
18
25
22
25
9
9
4.5
4.0
ns
t
r
Turn-On Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Turn-Off Fall Time
N-Channel
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5V, R
GEN
= 6
P-Channel
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate-Source Charge
nC
Q
gd
Gate-Drain Charge
N-Channel
V
DS
= 10 V, I
D
= 2.7 A, V
GS
= 4.5V
P-Channel
V
DS
= -10 V, I
D
= -1.9 A,V
GS
= -4.5V
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
0.8
-0.8
1.2
-1.2
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.8 A
(Note 2)
V
GS
= 0 V, I
S
= - 0.8 A
(Note 2)
0.76
-0.79
V
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
is guaranteed by design while R
θ
JA
is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy
equally.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 130
°
C/W when
mounted on a 0.125 in
2
pad of 2 oz. copper.
b) 140
°
C/W when
mounted on a 0.005 in
2
pad of 2 oz. copper.
c) 180
°
C/W when
mounted on a 0.0015 in
2
pad of 2 oz. copper.
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