參數(shù)資料
型號: FDB7042L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應管)
中文描述: 50 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: D2PAK-3
文件頁數(shù): 2/10頁
文件大?。?/td> 497K
代理商: FDB7042L
FDP7042L Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
===
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
24
mV/
°
C
V
DS
= 24 V,
V
GS
= 12 V,
V
GS
= –12 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
===
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
0.8
1.2
2
V
Gate Threshold Voltage
–4.1
mV/
°
C
V
GS
= 4.5 V,
V
GS
= 10 V,
V
GS
= 4.5 V, I
D
=25A, T
J
=125
°
C
V
GS
= 4.5 V,
V
DS
= 5V,
I
D
= 25A
I
D
= 25A
6.2
5.5
9.6
9
7.5
16
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 10 V
I
D
= 25 A
60
A
S
117
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2418
549
243
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
21
20
60
30
32
10
9
34
32
96
48
51
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 50 A,
V
GS
= 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
50
A
V
SD
V
GS
= 0 V,
I
S
= 25 A
(Note 2)
0.8
1.3
V
Notes:
1. Maximum continuous current is limited by the package.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關PDF資料
PDF描述
FDP7042L N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應管)
FDB8441 N-Channel PowerTrench MOSFET
FDB8442 N-Channel PowerTrench MOSFET
FDB8443 N-Channel PowerTrench㈢ MOSFET
FDB8444 N-Channel PowerTrench㈢ MOSFET 40V, 70A, 5.5mOhm
相關代理商/技術參數(shù)
參數(shù)描述
FDB7045L 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB7045L_Q 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FD-B8 制造商:SUNX 功能描述:FIBRE REFLECTIVE M6 2M 制造商:Panasonic Electric Works 功能描述:Slim Body Analog Fiber Sensor 2-Pin
FD-B8 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. LONG SENSING RANGE
FDB8030L 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube