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參數(shù)資料
| 型號： | FDB6670AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 62 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 100K |
| 代理商： | FDB6670AS |
FDP6670AS/FDB6670AS Rev A (X)
Typical Characteristics
0
30
60
90
120
150
0
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2
3
4
I
D
,
5.0V
V
GS
= 10V
4.5V
6.0V
4.0V
3.5V
3.0V
0.8
1
1.2
1.4
1.6
1.8
0
30
90
120
150
I
D
, D60
R
D
,
D
V
GS
= 3.5V
4.0V
6.0V
5.0V
10V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
T
J
, JUNCTION TEMPERATURE (
o
C)
25
50
75
100
125
150
R
D
,
I
D
= 31A
V
GS
= 10V
0.002
0.007
0.012
0.017
0.022
2
4
8
10
V
GS
, GATE TO SO6
R
D
,
I
D
= 15.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.01
0.1
1
10
0
0.1
0.3
0.4
0.5
0.6
V
SD
, BO0.2
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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|---|---|
| FDB6670AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDB6670AL | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDB6670S | 30V N-Channel PowerTrench? SyncFET |
| FDP6670S | 30V N-Channel PowerTrench? SyncFET |
| FDB6676S | 30V N-Channel PowerTrench SyncFET⑩ |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDB6670AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDB6670S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6670S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK |
| FDB6676 | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6676S | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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