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參數(shù)資料
| 型號： | FDB6030 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | N溝道MOSFET的邏輯電平的PowerTrench |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 401K |
| 代理商： | FDB6030 |
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ACEx
Bottomless
CoolFET
CROSSVOLT
E
2
CMOS
TM
FACT
FACT Quiet Series
FAST
FASTr
GTO
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This datasheet contains the design specifications for
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SuperSOT-8
SyncFET
TinyLogic
UHC
VCX
HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
Rev. E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDP6030 | N-Channel Logic Level PowerTrench MOSFET |
| FDP6030BL | N-Channel Logic Level PowerTrench MOSFET |
| FDB6030BL | N-Channel Logic Level PowerTrench MOSFET |
| FDB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDB6035AL | N-Channel Logic Level PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB6030BL | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030BL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB6030BL_Q | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030L | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030L_Q | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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