參數(shù)資料
型號(hào)： FDB33N25
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 250V N-Channel MOSFET
中文描述： 33 A, 250 V, 0.094 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D2PAK-3
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 688K
代理商： FDB33N25
2
www.fairchildsemi.com
FDB33N25 Rev A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, I
AS
= 33A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
°
C
3. I
SD
≤
33A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB33N25
FDB33N25TM
D2-PAK
330mm
24mm
800
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A
250
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
°
C
--
0.25
--
V/
°
C
Zero Gate Voltage Drain Current
V
DS
= 250V, V
GS
= 0V
V
DS
= 200V, T
C
= 125
°
C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
--
--
--
--
1
10
μ
A
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 16.5A
--
0.077
0.094
g
FS
Dynamic Characteristics
Forward Transconductance
V
DS
= 40V, I
D
=16.5A
(Note 4)
--
26.6
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
1640
2135
pF
Output Capacitance
--
330
430
pF
Reverse Transfer Capacitance
--
39
59
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
V
DD
= 125V, I
D
= 33A
R
G
= 25
(Note 4, 5)
--
35
80
ns
Turn-On Rise Time
--
230
470
ns
Turn-Off Delay Time
--
75
160
ns
Turn-Off Fall Time
--
120
250
ns
Total Gate Charge
V
DS
= 200V, I
D
= 33A
V
GS
= 10V
(Note 4, 5)
--
36.8
48
nC
Gate-Source Charge
--
10
--
nC
Gate-Drain Charge
--
17
--
nC
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
33
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
132
A
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 33A
V
GS
= 0V, I
S
= 33A
dI
F
/dt =100A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
220
--
ns
Reverse Recovery Charge
--
1.71
--
μ
C
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