參數(shù)資料
型號(hào)： FDA15N65
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 650V N-Channel MOSFET
中文描述： 16 A, 650 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 797K
代理商： FDA15N65
UniFET
TM
January 2007
200
7
Fairchild Semiconductor Corporation
FDA15N65 Rev. A
1
www.fairchildsemi.com
F
FDA15N65
650V N-Channel MOSFET
Features
16A, 650V, R
DS(on)
= 0.44
Ω
@V
GS
= 10 V
Low gate charge ( typical 48.5 nC)
Low C
rss
( typical 23.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
G
S
D
TO-3PN
FDA Series
Symbol
Parameter
FDA15N65
Unit
V
DSS
I
D
Drain-Source Voltage
650
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
16
9.6
A
A
I
DM
Drain Current
(Note 1)
64
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
637
mJ
Avalanche Current
(Note 1)
16
A
Repetitive Avalanche Energy
(Note 1)
26
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
260
2.1
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.48
°
C/W
Thermal Resistance, Case-to-Sink
0.24
--
°
C/W
Thermal Resistance, Junction-to-Ambient
--
40
°
C/W
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