參數(shù)資料
型號(hào): FCX605
廠商: Zetex Semiconductor
英文描述: 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
中文描述: 120伏特高壓NPN硅達(dá)林頓晶體管
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 107K
代理商: FCX605
ISSUE 1 - J ULY 2001
FCX605
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient (a)
R
θ
J A
125
°C/W
J unction to Ambient (b)
R
θ
J A
45
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT NPN
UNIT
Collector-Base Voltage
V
CBO
140
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
4
A
Continuous Collector Current
I
C
1
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
2.8
22
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
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