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參數(shù)資料
| 型號： | FCC21-12IO |
| 廠商： | IXYS CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristors |
| 中文描述： | 32.97 A, 1200 V, SCR |
| 封裝： | ISOPLUS, I4PAC-5 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 45K |
| 代理商： | FCC21-12IO |
2001 IXYS All rights reserved
1 - 2
1
IXYS reserves the right to change limits, test conditions and dimensions.
V
DRM
= V
RRM
= 1200 V
I
T(AV)
I
TSM
= 21 A
= 300 A
Phase Control Thyristors
-Phaseleg Topology-
in ISOPLUS i4-PAC
TM
1
5
FCC 21-12io
Features
Thyristor
- for line frequency
-chip technology for long term
stability
ISOPLUS i4-PAC
TM
package
- isolated back surface
- UL registered E 72873
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
controlled rectifiers
- power supplies
- drives
AC switches
Thyristors
Symbol
Conditions
Maximum Ratings
V
DRM
, V
RRM
1200
V
I
T(AV)
I
T(AV)
sine 180°; T
C
= 90°C
square; d =
1
/
3
; T
C
= 90°C
21
20
A
A
I
TSM
sine 180°; t = 10 ms; V
R
= 0 V; T
VJ
= 25°C
300
A
(di/dt)
cr
T
= T
f = 50 Hz, t
P
= 200 μs
V
D
=
2
/
V
DRM
I
G
= 0.3 A
di
G
/dt = 0.3 A/μs
repetitive, I
T
= 40 A
150
A/μs
non repetitive, I
T
= 30 A
500
A/μs
(dv/dt)
cr
T
VJ
= T
VJM
;
R
GK
=
∞
V
DR
=
2
/
3
V
DRM
1000
V/μs
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
T
I
T
= 30 A; T
VJ
= 25
°
C
T
VJ
=125
°
C
1.3
V
V
1.3
V
GT
I
GT
V
GD
I
GD
V
D
= 6 V
1.4
55 mA
V
T
VJ
= T
VJM
; V
D
=
2
/
3
V
DRM
0.2
V
5 mA
I
L
t
P
= 10
μ
s; V
D
= 6 V
I
G
= 0.3 A; di
G
/dt = 0.3 A/μs
150 mA
I
H
V
D
= 6 V; R
GK
=
∞
100
mA
t
gd
V
D
= V
V
= 6 V
I
G
= 0.3 A; di
G
/dt = 0.3 A/μs
2
μs
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
;T
VJ
= 25
°
C
50
μA
mA
VJ
= 125
°
C
0.5
R
thJC
R
thJH
DC current
1.0 K/W
K/W
1.32
V
RSM
V
DSM
V
V
RRM
V
DRM
V
Type
1300 1200
FCC 21-
12
io
Preliminary Data
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