參數(shù)資料
型號(hào)： FCB20N60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： CAP 0.039UF 50V 5% X7R AXIAL TR-14
中文描述： 20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
封裝： D2PAK-3
文件頁數(shù)： 2/8頁
文件大小： 614K
代理商： FCB20N60
2
www.fairchildsemi.com
FCB20N60 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 20A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
°
C
3. I
SD
≤
20A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
D
2
-PAK
Reel Size
Tape Width
Quantity
FCB20N60
FCB20N60
330mm
24m
800
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A, T
J
= 25
°
C
V
GS
= 0V, I
D
= 250
μ
A, T
J
= 150
°
C
600
--
--
V
--
650
--
V
BV
DSS
/
T
J
BV
DS
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
°
C
--
0.6
--
V/
°
C
Drain-Source Avalanche Breakdown
Voltage
V
GS
= 0V, I
D
= 20A
--
700
--
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125
°
C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
--
--
--
--
1
10
μ
A
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 10A
--
0.15
0.19
g
FS
Dynamic Characteristics
Forward Transconductance
V
DS
= 40V, I
D
= 10A
(Note 4)
--
17
--
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Switching Characteristics
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
2370
3080
pF
Output Capacitance
--
1280
1665
pF
Reverse Transfer Capacitance
--
95
--
pF
Output Capacitance
V
DS
= 480V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V to 400V, V
GS
= 0V
--
65
85
pF
Effective Output Capacitance
--
165
--
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
Turn-On Delay Time
V
DD
= 300V, I
D
= 20A
R
G
= 25
(Note 4, 5)
--
62
135
ns
Turn-On Rise Time
--
140
290
ns
Turn-Off Delay Time
--
230
470
ns
Turn-Off Fall Time
--
65
140
ns
Total Gate Charge
V
DS
= 480V, I
D
= 20A
V
GS
= 10V
(Note 4, 5)
--
75
98
nC
Gate-Source Charge
--
13.5
18
nC
Gate-Drain Charge
--
36
--
nC
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
20
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 20A
V
GS
= 0V, I
S
= 20A
dI
F
/dt =100A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
530
--
ns
Reverse Recovery Charge
--
10.5
--
μ
C
相關(guān)PDF資料
PDF描述
FCBS0550 Smart Power Module (SPM)
FCBS0650 Smart Power Module (SPM)
FCD4B14 Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output
FCD4B14CC Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output
FCD4B14CCB Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FCB20N60_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FCB20N60_F085 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V 20A D2PAK
FCB20N60F 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-CHANNEL FRFET
FCB20N60F_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channe MOSFET 600V, 20A, 190m??
FCB20N60F_F085 功能描述:MOSFET 600V, 20A SuperFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*