參數(shù)資料
型號： FAN5009M
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： MOSFETs
英文描述： Dual Bootstrapped 12V MOSFET Driver
中文描述： HALF BRDG BASED MOSFET DRIVER, PDSO8
封裝： 0.150 INCH, SOIC-8
文件頁數(shù)： 9/13頁
文件大?。?/td> 167K
代理商： FAN5009M
PRODUCT SPECIFICATION
FAN5009
REV. 1.0.5 7/22/04
9
Thermal Considerations
Total device dissipation:
where P
Q
represents quiescent power dissipation:
where F
SW
is switching frequency (in kHz).
P
R
is power dissipated in the bootstrap rectifier:
Where Q
G1
is total gate charge of the upper FET (Q1) for
it’s applied V
GS
.
V
F
for the applied I
F(AVG)
can be graphically determined
using the datasheet curves, where:
P
HDRV
represents internal power dissipation of the upper
FET driver.
Where P
H(R)
and P
H(F)
are internal dissipations for the
rising and falling edges, respectively:
where:
As described in eq. 8 and 9 above, the total power consumed
in driving the gate is divided in proportion to the resistances
in series with the MOSFET's internal gate node as shown
below:
Figure 5. Driver dissipation model
R
G
is the polysilicon gate resistance, internal to the FET.
R
E
is the external gate drive resistor implemented in many
designs. Note that the introduction of R
E
can reduce driver
power dissipation, but excess R
E
may cause errors in the
“adaptive gate drive” circuitry. For more information please
refer to Fairchild app note AN-6003, “Shoot-through” in
Synchronous Buck Converters.
P
LDRV
is dissipation of the lower FET driver.
Where P
H(R)
and P
H(F)
are internal dissipations for the
rising and falling edges, respectively:
where:
Layout Considerations
Use the following general guidelines when designing printed
circuit boards (see Figures 6 and 7):
1.
Trace out the high-current paths and use short, wide
(>25 mil) traces to make these connections.
2.
Connect the PGND pin of the FAN5009 as close as
possible to the source of the lower MOSFET.
3.
The V
CC
bypass capacitor should be located as close as
possible to V
CC
and PGND pins.
Use vias to other layers when possible to maximize
thermal conduction away from the IC.
4.
Figure 6. External component placement
recommendation for SO8 package (not to scale)
P
D
P
Q
P
R
P
HDRV
P
LDRV
+
+
+
=
(3)
P
Q
V
CC
4mA + 0.036 F
SW
100
–
)
[
]
×
=
(4)
P
R
V
F
F
SW
×
Q
G1
×
=
(5)
I
F AVG
)
F
SW
Q
G1
×
=
(6)
P
HDRV
P
H R
P
H F
( )
+
=
(7)
P
H R
P
Q1
R
E
R
R
E
+
HUP
R
G
+
---------------+
×
=
(8)
P
H F
( )
P
Q1
R
HDN
R
G
+
----------------------------------------
×
=
(9)
P
Q1
1
2
--
Q
×
G1
V
GS Q1
)
F
SW
×
×
=
(10)
HDRV
Q1
G
R
G
R
E
R
HUP
BOOT
SW
R
HDN
S
P
LDRV
P
L R
P
L F
( )
+
=
(11)
P
L R
P
Q2
R
R
E
+
R
LUP
R
G
+
---------------------------------------
×
=
(12)
P
L F
P
Q2
R
R
E
+
R
HDN
R
G
+
----------------------------------------
×
=
(13)
P
Q2
1
2
--
Q
×
G2
V
GS Q2
)
F
SW
×
×
=
(14)
1
2
3
4
8
7
6
5
C
BOOT
C
VCC
相關PDF資料
PDF描述
FAN5009MX Dual Bootstrapped 12V MOSFET Driver
FAN5009MPX Dual Bootstrapped 12V MOSFET Driver
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相關代理商/技術參數(shù)
參數(shù)描述
FAN5009MPX 功能描述:功率驅(qū)動器IC ANG FG Dual Bootstrp 12V MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
FAN5009MX 功能描述:功率驅(qū)動器IC Sync DC-DC MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
FAN5017MX 制造商:Fairchild Semiconductor Corporation 功能描述:
FAN5018_BBC3116B WAF 制造商:Fairchild Semiconductor Corporation 功能描述:
FAN5018B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:6-Bit VID Controller 2-4 Phase VR10.X Controller
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