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參數(shù)資料
| 型號(hào)： | FA38SA50LC |
| 廠商： | International Rectifier |
| 英文描述： | RECTIFIER BRIDGE 25A 200V 350A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | FA38SA50LC |
Parameter
Max.
38
24
150
500
4.0
± 20
580
38
50
16
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
V
ISO
-55 to + 150
2.5
kV
(1.3NM)
FA38SA50LC
HEXFET
Power MOSFET
S
D
G
V
DSS
= 500V
R
DS(on)
= 0.13
I
D
= 38A
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 watts. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
2/2/99
Description
l
Fully Isolated Package
l
Easy to Use and Parallel
l
Low On-Resistance
l
Dynamic dv/dt Rating
l
Fully Avalanche Rated
l
Simple Drive Requirements
l
Low Drain to Case Capacitance
l
Low Internal Inductance
SOT-227
Absolute Maximum Ratings
Parameter
Typ.
–––
0.05
Max.
0.25
–––
Units
R
θ
JC
R
θ
CS
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
°C/W
Thermal Resistance
1
PD - 91615B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FA38SA50LCP | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 500V 38A 4-Pin SOT-227 制造商:Vishay Intertechnologies 功能描述:MOSFET N-Channel 500V 38A SOT227 |
| FA396-8 | 制造商:GRAND-TEK TECHNOLOGY 功能描述:8WAY RJ45 COUPLER |
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