參數(shù)資料
型號: F49L800BA
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
中文描述: 8兆位(100萬x 8/512K × 16)3V時僅閃存的CMOS
文件頁數(shù): 42/47頁
文件大小: 435K
代理商: F49L800BA
ES MT
10.4 TEMPORARY SECTOR UNPROTECT Operation
F49L800UA/F49L800BA
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision: 1.2 42/47
Table 14. Temporary Sector Unprotect
Symbol
Description
All Speed Options
Unit
T
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
T
RSP
ESET
Unprotect
R
Setup Time for Temporary Sector
Min
4
us
Notes:
Not 100% tested
Figure 24. Temporary Sector Unprotect Timing Diagram
Figure 25. Q6 vs Q2 for Erase and Erase Suspend Operations
Notes :
The system can use OE or CE to toggle DQ2 / DQ6, DQ2 toggles only when read at an address within an
erase-suspended.
W E
RY/BY
CE
RESET
t
V I D R
t
RS P
0 or V
CC
P r o g r am or E r as e C om m an d S eq u e n c e
t
V I D R
0 or V
CC
12V
W E
DQ6
DQ2
Enter Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Resume
Erase
Erase
Complete
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L800BA-70T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-70TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-70TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-90T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800BA-90TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory