參數(shù)資料
型號(hào): F49L400BA-70T
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
中文描述: 4兆位(為512k × 8/256K × 16)3V時(shí)僅閃存的CMOS
文件頁(yè)數(shù): 29/47頁(yè)
文件大?。?/td> 397K
代理商: F49L400BA-70T
EFS T
F49L400UA/F49L400BA
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.1 29/47
Figure 11. Embedded Chip Erase Algorithm Flowchart
Start
Write Data AAH Address 555H
Embedded Chip Erease Completed
Data = FFh
Yes
No
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Poll from System
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L400BA-90T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA-70T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA-90T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory