參數(shù)資料
型號(hào)： F49L160BA
廠商： Elite Semiconductor Memory Technology Inc.
英文描述： 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
中文描述： 16兆位（2米x 8/1M × 16）3V時(shí)僅閃存的CMOS
文件頁(yè)數(shù)： 1/51頁(yè)
文件大?。?/td> 454K
代理商： F49L160BA
ES MT
F49L160UA/F49L160BA
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2006
Revision: 1.3 1/51
16 Mbit (2M x 8/1M x 16)
3V Only CMOS Flash Memory
1. FEATURES
z
Single supply voltage 2.7V-3.6V
z
Fast access time: 70/90 ns
z
2,097,152x8 / 1,048,576x16 switchable by
BYTE
pin
z
Compatible with JEDEC standard
- Pin-out, packages and software commands
compatible with single-power supply Flash
z
Low power consumption
- 7mA typical active current
- 25uA typical standby current
z
100,000 program/erase cycles typically
z
20 Years Data Retention
z
Command register architecture
- Byte Word Programming (9
μ
s/11
μ
s typical)
- Byte Mode : One 16KB, two 8KB, one 32KB, and
thirty-one 64KB sectors.
- Word Mode : one 8K word, two 4K word, one 16K
word, and thirty-one 32 K word sectors.
z
Auto Erase (chip & sector) and Auto Program
- Any combination of sectors can be erased
concurrently; Chip erase also provided.
- Automatically program and verify data at specified
address
z
Erase Suspend/Erase Resume
- Suspend or Resume erasing sectors to allow the
read/program in another sector
z
Ready/Busy (RY/
BY
)
- RY/
BY
output pin for detection of program or erase
operation completion
z
End of program or erase detection
- Data polling
- Toggle bits
z
Hardware reset
- Hardware pin(
ESET
R
) resets the internal state machine
to the read mode
z
Sector Protection /Unprotection
- Hardware Protect/Unprotect any combination of sectors
from a program or erase operation.
z
Low V
CC
Write inhibit is equal to or less than 2.0V
z
Boot Sector Architecture
- U = Upper Boot Block
- B = Bottom Boot Block
z
Packages available:
- 48-pin TSOPI
z
CFI (Common Flash Interface) complaint
- Provides device-specific information to the system,
allowing host software to easily reconfigure to different
Flash devices.
2. ORDERING INFORMATION
Part No
Boot
Speed
Package
Part No
Boot
Speed
Package
F49L160UA-70T
F49L160BA-70T
Upper
Bottom
70 ns
70 ns
TSOPI
TSOPI
F49L160UA-90T
F49L160BA-90T
Upper
Bottom
90 ns
90 ns
TSOPI
TSOPI
3. GENERAL DESCRIPTION
The F49L160UA/F49L160BA is a 16 Megabit, 3V only
CMOS Flash memory device organized as 2M bytes of 8
bits or 1M words of 16bits. This device is packaged in
standard 48-pin TSOP. It is designed to be programmed
and erased both in system and can in standard EPROM
programmers.
With access times of 70 ns and 90 ns, the
F49L160UA/F49L160BA
allows
high-speed microprocessors. The device has separate
chip enable
CE
, write enable
WE
, and output enable
OE
controls. EFST's memory devices reliably store
memory data even after 100,000 program and erase
cycles.
The F49L160UA/F49L160BA is entirely pin and
command set compatible with the JEDEC standard for 16
Megabit Flash memory devices. Commands are written to
the command register using standard microprocessor
write timings.
the
operation
of
The F49L160UA/F49L160BA features a sector erase
architecture. The device array is divided into one 16KB,
two 8KB, one 32KB, and thirty-one 64KB for byte mode.
The device memory array is divided into one 8K word, two
4K word, one 16K word, and thirty-one 32K word sectors
for word mode. Sectors can be erased individually or in
groups without affecting the data in other sectors.
Multiple-sector erase and whole chip erase capabilities
provide the flexibility to revise the data in the device.
The sector protect/unprotect
feature disables both
program and erase operations in any combination of the
sectors of the memory. This can be achieved in-system or
via programming equipment.
A low V
CC
detector inhibits write operations on loss of
power. End of program or erase is detected by the
Ready/Busy status pin, Data Polling of DQ7, or by the
Toggle Bit I feature on DQ6. Once the program or erase
cycle has been successfully completed, the device
internally resets to the Read mode.
相關(guān)PDF資料
PDF描述
F49L160BA-70T 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90T 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-70T 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-90T 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L160BA-70T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-70TG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TIG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
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