參數(shù)資料
型號(hào)： F49L160BA-90T
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
中文描述： 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： 12 X 20 MM, TSOP1-48
文件頁(yè)數(shù)： 8/51頁(yè)
文件大?。?/td> 454K
代理商： F49L160BA-90T
ES MT
Reset Mode :
Hardware Reset
When the
ESET
R
period of t
RP
, the device immediately terminates any
operation in progress, tri-states all output pins, and
ignores all read/write commands for the duration of the
ESET
R
pulse. The device also resets the internal state
machine to reading array data. The operation that was
interrupted should be reinitiated later once the device is
ready to accept another command sequence, to ensure
the data integrity.
The current is reduced for the duration of the
pulse. When
ESET
R
is held at V
SS
±0.3V, the device
draws CMOS standby current (I
CC4
). If
at V
IL
but not within V
SS
±0.3V, the standby current will
be greater.
The
ESET
R
pin may be tied to system reset circuitry.
A system reset would thus reset the Flash memory,
enabling the system to read the boot-up firm-ware from
the Flash memory.
If
ESET
R
is asserted during a program or erase
embedded algorithm operation, the RY/
BY
pin remains
a "0" (busy) until the internal reset operation is
complete, which requires a time of t
READY
(during
Embedded Algorithms). The system can thus monitor
RY/
BY
to determine whether the reset operation is
complete.
If
ESET
R
is asserted when a program or erase
operation is not executing , i.e. the RY/
BY
is “1”, the
reset operation is completed within a time of t
READY
(not
during Embedded Algorithms). The system can read
data after t
RH
when the
R
Refer to the AC Characteristics tables 17 for Hardware
Reset section & Figure 23 for the timing diagram.
Read Mode
To read array data from the outputs, the system must
drive the
CE
and
OE
pins to V
IL
.
CE
is the power
control and selects the device.
OE
is the output
control and gates array data to the output pins.
WE
should remain at V
IH
. The internal state machine is set
for reading array data upon device power-up, or after a
hardware reset. This ensures that no spurious
alteration of the memory content occurs during the
power transition.
No command is necessary in this mode to obtain array
data. Standard microprocessor’s read cycles that assert
F49L160UA/F49L160BA
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2006
Revision: 1.3 8/51
pin is driven low for at least a
ESET
R
ESET
R
is held
ESET
pin returns to V
IH
.
valid addresses on the device address inputs produce
valid data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
See “Read Command” section for more information.
Refer to the AC Read Operations table 14 for timing
specifications and to Figure 5 for the timing diagram. I
CC1
in the DC Characteristics table represents the active
current specification for reading array data.
Write Mode
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive
WE
and
CE
to V
IL
, and
OE
to V
IH
. The “Program Command” section
has details on programming data to the device using
standard command sequences.
An erase operation can erase one sector, multiple
sectors, or the entire device. Tables 1 and 2 indicate the
address space that each sector occupies. A “sector
address” consists of the address bits required to uniquely
select a sector. The “Software Command Definitions”
section has details on erasing a sector or the entire chip,
or suspending/resuming the erase operation.
When the system writes the auto-select command
sequence, the device enters the auto-select mode. The
system can then read auto-select codes from the internal
register (which is separate from the memory array) on
DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the Auto-select Mode and Auto-select
Command sections for more information. I
CC2
in the DC
Characteristics table represents the active current
specification for the write mode. The “AC Characteristics”
section contains timing specification tables and timing
diagrams for write operations.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically enables
this mode when addresses remain unchanged for over
250ns. The automatic sleep mode is independent of the
CE
,
WE
, and
OE
control signals. Standard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and
always available to the system. I
CC4
in the DC
Characteristics table represents the automatic sleep
mode current specification.
Word / Byte Mode
This pin control the I/O configuration of device. When
BYTE
= V
IH
or Vcc ± 0.3V. The I/O configuration is x16
and the pin of D15/A-1 is bi-direction Data I/O. However,
BYTE
= V
IL
or V
SS
± 0.3V. The I/O configuration would
be x8 and The pin of DQ15/A-1 only address input pin.
You must define the function of this pin before enable this
device.
相關(guān)PDF資料
PDF描述
F49L160UA 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L160BA-90TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
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