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參數(shù)資料
| 型號： | F25L004A-100DG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 512K X 8 FLASH 3V PROM, PDIP8 |
| 封裝： | 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 1/32頁 |
| 文件大小： | 393K |
| 代理商： | F25L004A-100DG |
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ES MT
F25L004A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
1/32
Publication Date
:
Apr. 2007
4Mbit (512Kx8)
3V Only Serial Flash Memory
FEATURES
y
Single supply voltage 2.7~3.6V
y
Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz; 75MHz; 100MHz
y
Low power consumption
- typical active current
- 15
μ
A typical standby current
y
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y
Program
- Byte program time 7
μ
s(typical)
y
Erase
- Chip erase time 4s(typical)
- Sector erase time 60ms(typical),
block erase time 1sec (typical)
ORDERING INFORMATION
y
Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Byte-Program operations
y
SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
y
End of program or erase detection
y
Write Protect (
WP
)
y
Hold Pin (HOLD)
y
Package available
- 8-pin SOIC 150-mil
- 8-pin SOIC 200-mil
Part No.
Speed
Package
COMMENTS
F25L004A -50PG
50MHz
8 lead
SOIC
150 mil
Pb-free
F25L004A -100PG 100MHz
8 lead
SOIC
150 mil
Pb-free
F25L004A -50PAG 50MHz
8 lead
SOIC
200 mil
Pb-free
Part No.
Speed
Package
COMMENTS
F25L004A –100PAG 100MHz
8 lead
SOIC
200 mil
Pb-free
F25L004A –50DG
50MHz
8 lead
PDIP
300 mil
Pb-free
F25L004A –100DG 100MHz
8 lead
PDIP
300 mil
Pb-free
GENERAL DESCRIPTION
The F25L004A is a 4Megablt, 3V only CMOS Serial Flash
memory device organized as 512K bytes of 8 bits. This device is
packaged in 8-lead SOIC 200mil. ESMT’s memory devices
reliably store memory data even after 100,000 program and
erase cycles.
The F25L004A features a sector erase architecture. The device
memory array is divided into 128 uniform sectors with 4K byte
each ; 8 uniform blocks with 64K byte each. Sectors can be
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
相關PDF資料 |
PDF描述 |
|---|---|
| F25L004A-100PAG | 4 Mbit Uniform Sector, Serial Flash Memory |
| F25L004A-100PG | 4 Mbit Uniform Sector, Serial Flash Memory |
| F25L004A-50DG | 4 Mbit Uniform Sector, Serial Flash Memory |
| F25L004A-50PAG | 4 Mbit Uniform Sector, Serial Flash Memory |
| HL1A100KR | ALUMINIUM ELECTROLYTIC CAPACITOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| F25L004A-100DIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40°C ~85°C |
| F25L004A-100PAG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory |
| F25L004A-100PAIG | 制造商:ELITE SEMICONDUCTOR 功能描述:FLASH 4MB 3V SPI 100MHZ SOIC8 |
| F25L004A-100PG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory |
| F25L004A-100PIG | 制造商:ELITE SEMICONDUCTOR 功能描述:FLASH 4MB 3V SPI 100MHZ SOIC8 |
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