參數(shù)資料
型號(hào): F2246
廠商: Polyfet RF Devices
英文描述: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 33K
代理商: F2246
POUT VS PIN GRAPH
F2246
F2C 1 DIE CAPACITANCE
VDS IN VOLTS
1
10
100
0
5
10
15
20
25
30
Crss
Coss
Ciss
F2C I DIE IV CURVE
Vds in Volts
0
0.5
1
1.5
2
2.5
0
2
4
6
8
10
12
14
16
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F2C 1 DIE GM & ID vs VGS
Vgs in Volts
0.01
0.1
1
10
0
2
4
6
8
10
12
14
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97
相關(guān)PDF資料
PDF描述
F2247 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2248 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F30D05 POWER RECTIFIERS(30A,50-200V)
F30D10 POWER RECTIFIERS(30A,50-200V)
F30D15 POWER RECTIFIERS(30A,50-200V)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F2247 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2248 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F224X 功能描述:電源變壓器 115VAC 12.6V 3.0A PRI 115VAC RoHS:否 制造商:Triad Magnetics 功率額定值:12 VA 初級(jí)電壓額定值:115 V / 230 V 次級(jí)電壓額定值:12 V / 24 V 安裝風(fēng)格:SMD/SMT 一次繞組:Dual Primary Winding 二次繞組:Dual Secondary Winding 長(zhǎng)度:2.5 in 寬度:2 in 高度:1.062 in
F-224X 制造商:Triad Magnetics 功能描述:
F2250NLGK 功能描述:RF Attenuator 35dB 50MHz ~ 6GHz 50 Ohm 16-TFQFN Exposed Pad 制造商:idt, integrated device technology inc 系列:- 零件狀態(tài):有效 衰減值:35dB 容差:- 頻率范圍:50MHz ~ 6GHz 功率(W):- 阻抗:50 歐姆 封裝/外殼:16-TFQFN 裸露焊盤(pán) 標(biāo)準(zhǔn)包裝:624