參數(shù)資料
型號: F1T2
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 1.0 AMP. Fast Recovery Rectifiers
中文描述: 1.0安培??旎謴?fù)二極管
文件頁數(shù): 2/2頁
文件大小: 62K
代理商: F1T2
- 393 -
RATINGS AND CHARACTERISTIC CURVES (F1T1 THRU F1T7)
FIG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
P
1
2
4
6
8
10
20
100
40
60
80
20
10
0
40
50
30
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
JEDEC Method
FIG.3- TYPICAL FORWARD CHARACTERISTICS
I
1.6
1.8
0.4
0.6
0.8
1.0
1.2
1.4
0.03
0.1
0.3
1
10
20
3
0.01
FORWARD VOLTAGE. (V)
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
o
FIG.4- TYPICAL JUNCTION CAPACITANCE
J
1
2
4
6
10
100
60
40
20
10
1
30
50
90
REVERSE VOLTAGE. (V)
Tj=25 C
0
FIG.1- MAXIMUM TYPICAL FORWARD CURRENT
DERATING CURVE
A
25
0
50
75
100
125
150
175
0.5
0
0.25
0.75
1.0
AMBIENT TEMPERATURE. ( C)
o
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
20
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