- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375695 > F1108 (Polyfet RF Devices) PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | F1108 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 專利金金屬化硅柵增強型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 41K |
| 代理商： | F1108 |
RF CHARACTERISTICS ( WATTS OUTPUT )
80
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
80Watts Gemini
Package Style AK
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
170Watts
0.95
C
o
200
-65
to 150
8 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Pow er Gain
Drain Efficiency
Load Mismatch Tolerance
dB
%
Relative
11
55
0.8
20:1
Idq =
Idq =
Idq =
0.8
0.8
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 400MHz
F = 400MHz
F = 400MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdow n Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forw ard Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
2
1
7
1
2
0.7
12
80
10
60
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.1
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.2
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 8
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com
REVISION
C
o
C
o
C/W
o
F1108
polyfet rf devices
8/1/97
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| F1116 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1120 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1170 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1174 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1200A | Fast Silicon Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F1-10822APA-N0 | 制造商:POWER-SYSTEMS 制造商全稱:Power Systems GmbH+Co.KG 功能描述:TOUCH SCREEN |
| F1-10841APA-G0 | 制造商:POWER-SYSTEMS 制造商全稱:Power Systems GmbH+Co.KG 功能描述:TOUCH SCREEN |
| F11090153600060 | 制造商:CANTHERM 功能描述: |
| F1109045 | 功能描述:THERM NORM CLOSED 90 DEG C SWITC RoHS:是 類別:過電壓，電流，溫度裝置 >> 溫度調(diào)節(jié)器 系列:F11-E06 標(biāo)準(zhǔn)包裝:10 系列:3150 電路:- 開關(guān)溫度:- 封裝/外殼:圓柱形，帶安裝法蘭 安裝類型:底座安裝 其它名稱:3150 002302403150 00230240-ND |
| F11095-000 | 制造商:TE Connectivity 功能描述:Fuse Chip 1.25A 63V Slow Blow 2-Pin Solder Pad Surface Mount T/R 制造商:TE Connectivity 功能描述:FUSE 1.25A 63V SMD 2SMD - Tape and Reel 制造商:TE Connectivity 功能描述:FUSE 1.25A 63V SLOW SMD 1206 制造商:TE Connectivity / Raychem 功能描述:FUSE 1.25A 63V SLOW SMD 1206 制造商:TE Connectivity 功能描述:1206SFS125F/63-2 制造商:TE CONNECTIVITY RAYCHEM-POLYSWITCH 功能描述:El Fuse / 1206SFS125F/63-2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。