參數(shù)資料
型號(hào)： F10H60S
廠商： Fairchild Semiconductor Corporation
英文描述： Hyperfast Recovery Power Rectifier
中文描述： Hyperfast恢復(fù)電力整流器
文件頁數(shù)： 1/5頁
文件大?。?/td> 168K
代理商： F10H60S
tm
2006 Fairchild Semiconductor Corporation
FFPF10H60S Rev. A
1
www.fairchildsemi.com
January 2007
F
FFPF10H60S
Hyperfast Recovery Power Rectifier
Features
High Speed Switching ( t
rr
=25ns(Typ.) @ I
F
=10A )
High Reverse Voltage and High Reliability
Avalanche Energy Rated
Low Forward Voltage( V
F
=2.1V(Typ.) @ I
F
=10A )
Applications
General Purpose
Switching Mode Power Supply
Free-wheeling diode for motor application
Power switching circuits
General Description
The FFPF10H60S is hyperfast rectifier (t
rr
=25ns(Typ.) @
I
F
=10A). it has half the recovery time of ultrafast rectifier and is
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
This device is intended for use as freewheeling/clamping rectifi-
ers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transis-
tors.
Pin Assignments
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering
1. Cathode 2. Anode
TO-220F-2L
Marking:F10H60S
1
1. Cathode 2. Anode
2
1
2
Symbol
Parameter
Value
Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
Peak Repetitive Reverse Voltage
600
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
Average Rectified Forward Current @ T
C
= 85
°
C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
10
A
100
A
T
J,
T
STG
Operating Junction and Storage Temperature
- 65 to +150
°
C
Symbol
Parameter
Max
Units
R
θ
JC
Maximum Thermal Resistance, Junction to Case
3.4
°
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
F10H60S
FFPF10H60STU
TO-220F
-
-
50
T
C
= 25°C unless otherwise noted
T
C
= 25°C unless otherwise noted
Information
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