參數(shù)資料
型號(hào): F1081
廠商: Polyfet RF Devices
英文描述: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 40K
代理商: F1081
40
60
80
100
120
140
P
160
180
10
11
12
13
14
15
16
17
G
0
2
4
6
8
10
12
14
16
PIN IN WATTS
POUT
GAIN
F-1081 POUT vs PIN
F=175 MHZ; IDQ=1.6A; VDS=28V
Efficiency = 66.67%
POUT VS PIN GRAPH
F1081
F1B 4DIE CAPACITANCE
VDS IN VOLTS
10
100
1000
0
5
10
15
20
25
30
Crss
Coss
Ciss
F1B 4DIE IV CURVE
Vds in Volts
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
16
18
20
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F1B 4 DIE GM & ID vs VGS
Vgs in Volts
0.1
1
10
100
0
2
4
6
8
10
12
14
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION 1/12/98
相關(guān)PDF資料
PDF描述
F1107 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1260 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1280 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F12C05 CAP CERAMIC 150PF 50V X7R 0201
F12C10 POWER RECTIFIERS(12A,50-200V)
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