| 型號(hào): | F1076 |
| 廠商: | Polyfet RF Devices |
| 英文描述: | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述: | 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管 |
| 文件頁(yè)數(shù): | 2/2頁(yè) |
| 文件大小: | 38K |
| 代理商: | F1076 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| F1077 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1081 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1107 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1260 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1280 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F1077 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F-107Z | 功能描述:電源變壓器 24VCT@2A 12V@4A LUG CONNECTION RoHS:否 制造商:Triad Magnetics 功率額定值:12 VA 初級(jí)電壓額定值:115 V / 230 V 次級(jí)電壓額定值:12 V / 24 V 安裝風(fēng)格:SMD/SMT 一次繞組:Dual Primary Winding 二次繞組:Dual Secondary Winding 長(zhǎng)度:2.5 in 寬度:2 in 高度:1.062 in |
| F108 | 功能描述:烙鐵 CERAMIC FUNNEL/WES50 RoHS:否 制造商:Weller 產(chǎn)品:Soldering Stations 類型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大溫度:+ 850 F 電纜類型:US Cord Included |
| F10808RS02QA | 制造商:C&K Components 功能描述: |
| F1081 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |