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參數(shù)資料
| 型號： | F1072 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 專利金金屬化硅柵增強型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 38K |
| 代理商： | F1072 |
F1072 POUT vs PIN Idq=1.2A F=400 Mhz Vds=28V
PIN IN WATTS
0
20
40
60
80
100
120
140
160
180
0
5
10
15
20
25
30
35
40
POUT
6
7
8
9
10
11
12
13
14
GAIN
POUT
GAIN
Efficiency = 53%
POUT VS PIN GRAPH
F1072
F1B 3DIE CAPACITANCE
VDS IN VOLTS
10
100
1000
0
5
10
15
20
25
30
Crss
Coss
Ciss
F1B 3DIE IV CURVE
Vds in Volts
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F1B 3 DIE GM & ID vs VG
Vgs in Volts
0.1
1
10
100
0
2
4
6
8
10
12
14
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| F1074 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1076 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1077 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1081 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1107 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F10721 | 制造商:Thomas & Betts 功能描述:NON-INS - TUB RING TERM, 4, 5/16, M 制造商:Thomas & Betts 功能描述:Tubular 4AWG 36.06mm 15.74mm Electro-Tin Bulk |
| F10721NP | 制造商:Thomas & Betts 功能描述:NON INSL TERM 4AWG 5/16BH |
| F10721U | 制造商:Thomas & Betts 功能描述:NON-INS TERM 4AWG |
| F10731 | 制造商:Thomas & Betts 功能描述:NON-INS - TUB RING TERM, 4, 3/8, ME ;ROHS COMPLIANT: YES 制造商:Thomas & Betts 功能描述:Tubular 4AWG 36.06mm 15.74mm Electro-Tin Bulk |
| F10731NP | 制造商:Thomas & Betts 功能描述:NON INS TERM 4AWG 1/4STUD |
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