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參數(shù)資料
| 型號： | F1070 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 專利金金屬化硅柵增強型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | F1070 |
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PIN IN WATTS
POUT
GAIN
F-1070 POUT vs PIN
F=175 MHZ; IDQ=1.6A; VDS=28V
Efficiency = 66.67%
POUT VS PIN GRAPH
F1070
F1B 4DIE CAPACITANCE
VDS IN VOLTS
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Crss
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Ciss
F1B 4DIE IV CURVE
Vds in Volts
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Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F1B 4 DIE GM & ID vs VGS
Vgs in Volts
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Gm
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POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| F1072 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1074 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1076 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1077 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1081 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F10711 | 制造商:Thomas & Betts 功能描述:TERMINAL, STA-KON ;ROHS COMPLIANT: YES 制造商:Thomas & Betts 功能描述:Tubular 4AWG 34.79mm 13.97mm Electro-Tin Bulk |
| F10711NP | 制造商:Thomas & Betts 功能描述:STAKON BULK PACK NON-INSUL |
| F10711U | 制造商:Thomas & Betts 功能描述:STAKON 90 DEG BEND, SPECIALS, KITS 制造商:Thomas & Betts 功能描述:STAKON 90 DEG BEND SPECIALS KITS |
| F1072 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F10721 | 制造商:Thomas & Betts 功能描述:NON-INS - TUB RING TERM, 4, 5/16, M 制造商:Thomas & Betts 功能描述:Tubular 4AWG 36.06mm 15.74mm Electro-Tin Bulk |
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