參數(shù)資料
型號: F1003
廠商: Polyfet RF Devices
英文描述: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 專利金金屬化硅柵增強型射頻功率VDMOS晶體管
文件頁數(shù): 6/6頁
文件大小: 104K
代理商: F1003
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NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DE-
VICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMI-
CONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or sys-
tems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, and whose fail-
ure to perform when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be rea-
sonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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