TA
參數(shù)資料
型號： EVAL-ADF4113EBZ1
廠商： Analog Devices Inc
文件頁數(shù)： 25/28頁
文件大?。?/td> 0K
描述： BOARD EVAL FOR ADF4113
標(biāo)準(zhǔn)包裝： 1
主要目的： 計時，頻率合成器
嵌入式： 否
已用 IC / 零件： ADF4113
主要屬性： 單路整數(shù)-N PLL
次要屬性： 1.75GHz 圖形用戶界面
已供物品： 板，線纜，軟件
相關(guān)產(chǎn)品： ADF4113BCPZ-ND - IC PLL FREQ SYNTHESIZER 20-LFCSP
ADF4113BCPZ-RL7-ND - IC PLL FREQ SYNTHESIZER 20-LFCSP
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ADF4113HVBRUZ-RL7-ND - IC CHARGE PUMP HV SYNTH 16-TSSOP
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ADF4113HVBCPZ-RL7-ND - IC CHARGE PUMP HV SYNTH 20-LFCSP
ADF4113HVBCPZ-RL-ND - IC CHARGE PUMP HV SYNTH 20-LFCSP
ADF4113HVBRUZ-ND - IC CHARGE PUMP HV SYNTH 16-TSSOP
ADF4113HVBCPZ-ND - IC CHARGE PUMP HV SYNTH 20-LFCSP
ADF4113BRUZ-REEL7TR-ND - IC SYNTHESZR FREQ PLL RF 16TSSOP
更多...
ADF4110/ADF4111/ADF4112/ADF4113
Data Sheet
Rev. F | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted
Table 3.
Parameter
Rating
AVDD to GND1
0.3 V to +7 V
AVDD to DVDD
0.3 V to +0.3 V
VP to GND
0.3 V to +7 V
VP to AVDD
0.3 V to +5.5 V
Digital I/O Voltage to GND
0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB to GND
0.3 V to VDD + 0.3 V
RFINA to RFINB
±320 mV
Operating Temperature Range
Industrial (B Version)
40°C to +85°C
Storage Temperature Range
65°C to +150°C
Maximum Junction Temperature
150°C
TSSOP θJA Thermal Impedance
150.4°C/W
LFCSP θJA Thermal Impedance
(Paddle Soldered)
122°C/W
LFCSP θJA Thermal Impedance
(Paddle Not Soldered)
216°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
6425 (CMOS) and 303 (Bipolar).
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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