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參數(shù)資料
| 型號(hào)： | ES1B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | SMA ultra fast low-loss controlled avalanche rectifiers(SMA超快速低損耗控制的雪崩整流器) |
| 中文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | ES1B |
2000 Feb 14
3
Philips Semiconductors
Product specication
SMA ultra fast low-loss
controlled avalanche rectiers
ES1 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 m.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 m. For more
information please refer to the
‘General Part of associated Handbook’.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; see Fig.4
1.1
V
IR
reverse current
VR =VRRMmax; see Fig.5
5
A
VR =VRRMmax; Tj = 165 °C; see Fig.5
100
A
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.9
25
ns
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.6
19
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point; see Fig.7
27
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
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| ES1C | SMA ultra fast low-loss controlled avalanche rectifiers(SMA超快速低損耗控制的雪崩整流器) |
| ES1D | SMA ultra fast low-loss controlled avalanche rectifiers(SMA超快速低損耗控制的雪崩整流器) |
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| ES1B 115-165C | 功能描述:傳感器硬件與配件 IR Thermosensor 115-165C RoHS:否 制造商:Honeywell 產(chǎn)品:Magnet Collar |
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