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參數(shù)資料
| 型號： | ERA-8SM |
| 廠商： | MINI-CIRCUITS |
| 元件分類： | 放大器 |
| 英文描述： | MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz |
| 中文描述： | 0 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, CASE WW107, MICRO-X, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 216K |
| 代理商： | ERA-8SM |
Monolithic InGaP HBT MMIC Amplifier
Page 2 of 4
Mini-Circuits
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
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Provides ACTUAL Data Instantly From MINI-CIRCUITS
At:
www.minicircuits.com
RF/IF MICROWAVE COMPONENTS
minicircuits.com
ALLNEW
Electrical Specifications at 25°C and 36mA, unless noted
ERA-8SM+
Absolute Maximum Ratings
Parameter
Ratings
Operating Temperature*
-45°C to 85°C
Storage Temperature
-65°C to 150°C
Operating Current
65mA
Power Dissipation
250mW
Input Power
13dBm
Note: Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
1
Case is defined as ground leads.
*Based on typical case temperature rise 5°C above ambient.
Parameter
Min.
Typ.
Max.
Units
Cpk
Frequency Range*
DC
2
GHz
Gain
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=4 GHz
f=2 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=3 GHz
f=0.1 GHz
f=1 GHz
f=2 GHz
f=1 GHz
29.3
22.9
31.5
24.4
19
15
12
.0079
.0071
.0076
.0089
.0095
14.5
16
15
13
10
12
13.5
12
10
8
23
12.5
12.5
10.5
7.5
14.9
13.7
11.9
8.7
27
25
21.5
18
2.2
2.8
3
130
36
3.7
-0.5
6.4
140
32.3
25.9
dB
≥ 1.5
Magnitude of Gain Variation versus Temperature
(values are negative)
.016
.016
.016
dB/°C
Input Return Loss
dB
Output Return Loss
dB
Reverse Isolation
20
dB
dBm
Output Power @ 1 dB compression
≥ 1.33
10
Saturated Output Power
(at 3dB compression)
dBm
Output IP3
24
22
18
dBm
≥ 1.33
Noise Figure
3
dB
3.8
4
Group Delay
Recommended Device Operating Current
Device Operating Voltage
Device Voltage Variation vs. Temperature at 36mA
Device Voltage Variation vs. Current at 25°C
Thermal Resistance, junction-to-case
1
*
Guaranteed specification DC-2 GHz. Low frequency cut off determined by external coupling capacitors.
psec
mA
V
mV/°C
mV/mA
°C/W
3.5
3.9
≥ 1.5
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