參數(shù)資料
型號(hào): EPM7512BFC256-7N
廠商: Altera
文件頁數(shù): 8/66頁
文件大?。?/td> 0K
描述: IC MAX 7000 CPLD 512 256-FBGA
標(biāo)準(zhǔn)包裝: 90
系列: MAX® 7000B
可編程類型: 系統(tǒng)內(nèi)可編程
最大延遲時(shí)間 tpd(1): 7.5ns
電壓電源 - 內(nèi)部: 2.375 V ~ 2.625 V
邏輯元件/邏輯塊數(shù)目: 32
宏單元數(shù): 512
門數(shù): 10000
輸入/輸出數(shù): 212
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 256-BGA
供應(yīng)商設(shè)備封裝: 256-FBGA(17x17)
包裝: 托盤
16
Altera Corporation
MAX 7000B Programmable Logic Device Data Sheet
Programming Sequence
During in-system programming, instructions, addresses, and data are
shifted into the MAX 7000B device through the TDI input pin. Data is
shifted out through the TDO output pin and compared against the
expected data.
Programming a pattern into the device requires the following six ISP
stages. A stand-alone verification of a programmed pattern involves only
stages 1, 2, 5, and 6.
1.
Enter ISP. The enter ISP stage ensures that the I/O pins transition
smoothly from user mode to ISP mode. The enter ISP stage requires
1ms.
2.
Check ID. Before any program or verify process, the silicon ID is
checked. The time required to read this silicon ID is relatively small
compared to the overall programming time.
3.
Bulk Erase. Erasing the device in-system involves shifting in the
instructions to erase the device and applying one erase pulse of
100 ms.
4.
Program. Programming the device in-system involves shifting in the
address and data and then applying the programming pulse to
program the EEPROM cells. This process is repeated for each
EEPROM address.
5.
Verify. Verifying an Altera device in-system involves shifting in
addresses, applying the read pulse to verify the EEPROM cells, and
shifting out the data for comparison. This process is repeated for
each EEPROM address.
6.
Exit ISP. An exit ISP stage ensures that the I/O pins transition
smoothly from ISP mode to user mode. The exit ISP stage requires
1ms.
Programming Times
The time required to implement each of the six programming stages can
be broken into the following two elements:
A pulse time to erase, program, or read the EEPROM cells.
A shifting time based on the test clock (TCK) frequency and the
number of TCK cycles to shift instructions, address, and data into the
device.
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