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參數(shù)資料
| 型號(hào)： | ENN7385 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Low-Frequency General-Purpose Amplifier Applications |
| 中文描述： | 低頻通用放大器應(yīng)用 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 25K |
| 代理商： | ENN7385 |
CPH6517
No.7385-2/3
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
160
max
Unit
DC Current Gain
hFE1
hFE2
VCE=2V, IC=10mA
VCE=2V, IC=400mA
560
80
DC Current Gain Ratio
hFE(Small /
Large)
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=2V, IC=10mA
0.8
0.98
Gain-Bandwidth Product
Output Capacitance
VCE=2V, IC=50mA
VCB=10V, f=1MHz
IC=5mA, IB=0.5mA
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10
μ
A, IE=0
IC=1mA, RBE=
∞
IE=10
μ
A, IC=0
300
MHz
pF
mV
mV
V
V
V
V
4
Collector-to-Emitter Saturation Voltage
15
160
0.95
30
300
1.2
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
20
15
5
1.0
10
5 7
2
3
5 7
100
5 7
2
3
5 7
2
3
3
2
3
5
7
100
10
2
5
7
1000
2
3
5
0
0.4
0.8
1.2
1.6
2.0
40
80
120
160
200
0
100
200
300
400
500
600
0
IC -- VCE
0.9mA
ITR10442
IB=0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IC -- VBE
ITR10443
100
1000
7
5
3
2
7
5
3
2
1.0
10
5
7
2
3
100
5
7
2
3
5
7
2
3
10
5
7
100
5
7
2
3
5
2
3
hFE -- IC
ITR10444
25
°
C
--25
°
C
Ta=75
°
C
2
°
C
T7
°
C
-
°
C
VCE=2V
VCE=2V
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.6mA
0.7mA
fT -- IC
ITR10445
5
2
3
5
7
1000
100
7
2
1.0
5
7
10
5
7
2
3
2
3
1.0
2
3
5
7
10
2
3
5
VCE=2V
VCE(sat) -- IC
ITR10447
IC / IB=20
Ta=75
°
C
--25
°
C
25
°
C
Cob -- VCB
ITR10446
f=1MHz
0.8mA
O
Collector-to-Base Voltage, VCB -- V
Collector Current, IC -- mA
C
S
Collector Current, IC -- mA
D
Collector Current, IC -- mA
G
Collector-to-Emitter Voltage, VCE -- V
C
Base-to-Emitter Voltage, VBE -- V
C
10mA
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