參數(shù)資料
型號: EN29LV800BB-70BIP
廠商: Eon Silicon Solution Inc.
英文描述: 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 8兆位(1024K × 8位/為512k × 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 22/41頁
文件大?。?/td> 363K
代理商: EN29LV800BB-70BIP
Flowchart 7b. In-System Sector Unprotect Flowchart
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. G, Issue Date: 2006/05/16
EN29LV800B
START
PLSCNT = 1
RESET# = V
ID
Wait 1
μ
S
First Write
Cycle = 60h
Temporary Sector
Unprotect Mode
No
Yes
All sectors
protected
Yes
No
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector unprotect
address (see
Diagram 7a.)
Set up first sector
address
Sector Unprotect: Write 60H to
sector address with A6 = 1,
A1 = 1, A0 = 0
Wait 15 ms
Verify Sector Unprotect:
Write 40h to sector address
with A6 = 1, A1 = 1, A0 =0
Read from sector address with
A6 = 1, A1 = 1, A0 = 0
Data = 00h
No
PLSCNT =
1000
No
Increment
PLSCNT
Yes
Device failed
Last sector
verified
No
Set up next sector
address
Remove V
ID
from
RESET#
Write reset
command
Sector Unprotect
complete
Sector
Unprotect
Algorithm
Wait 0.4
μ
S
Yes
Yes
相關(guān)PDF資料
PDF描述
EN29LV800BB-70TC 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800BB-70TCP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800BB-70TI 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV800BB-70TIP 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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