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參數(shù)資料
| 型號： | EN29LV160JT90S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Replaced by PTN78000W : 8VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE |
| 中文描述： | 16兆位（2048K × 8位/ 1024K x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁數(shù)： | 1/44頁 |
| 文件大?。?/td> | 264K |
| 代理商： | EN29LV160JT90S |
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FEATURES
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
1
EN29LV160J
Rev 0.3 Release Date: 2002/01/30
3.0V, single power supply operation
- Minimizes system level power requirements
Manufactured on 0.28 μm process technology
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
μ
A typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword
and thirty-one 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
GENERAL DESCRIPTION
High performance program/erase speed
- Byte program time: 8μs typical
- Sector erase time: 200ms typical
- Chip erase time: 3.5s typical
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
0.28 μm double-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 2.5V
>100K program/erase endurance cycle
48-pin TSOP (Type 1)
Commercial Temperature Range
The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10μs.
The EN29LV160J features 3.0V voltage read and write operation, with access times as fast as 55ns
to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160J has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
EN29LV160J ******PRELIMINARY DRAFT******
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV160JT90SI | Replaced by PTN78000W : |
| EN29LV160JT90SIP | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV160JT90SP | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV160JT90T | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV160JT90TI | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV320AT-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV320A Series, 32 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash |
| EN29LV320B-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:32 Megabit, CMOS, 3V, Boot Sector Flash Memory, TSOP-48 |
| EN29LV320BT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:32M TOP BOOT TSOP |
| EN29LV320CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:32M Parallel Flash, x8/x16, 70ns, TSOP48 |
| EN29LV400AB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV400A Series, 4 Mbit (512 K x 8) 70 NS 48 TSOP 3 V Bottom Boot NOR Flash |
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