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參數(shù)資料
| 型號(hào)： | EN29LV160AB-90BC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY |
| 中文描述： | 16兆位（2048K × 8 -位/ 1024 kX的16位）閃存 |
| 文件頁數(shù)： | 1/43頁 |
| 文件大?。?/td> | 930K |
| 代理商： | EN29LV160AB-90BC |
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FEATURES
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2005/01/07
EN29LV160A
EN29LV160A
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
3.0V, single power supply operation
- Minimizes system level power requirements
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
μ
A standby current
Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and thirty-one 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and thirty-one 32-Kword sectors (word mode)
Sector protection :
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
High performance program/erase speed
- Byte/Word program time: 8μs typical
GENERAL DESCRIPTION
- Sector erase time: 500ms typical
- Chip erase time: 17.5s typical
JEDEC Standard program and erase
commands
JEDEC standard DATA# polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
Triple-metal double-poly triple-well CMOS
Flash Technology
Low Vcc write inhibit < 2.5V
minimum 1,000K program/erase endurance
cycle
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
Commercial and Industrial Temperature
Range
The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs.
The EN29LV160A features 3.0V voltage read and write operation, with access times as fast as
70ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV160A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable
(WE#) controls, which eliminate bus contention issues. This device is designed to allow either
single
Sector or full chip erase operation, where each Sector can be individually protected
against program/erase operations or temporarily unprotected to erase or program. The device
can sustain a minimum of 1,000K program/erase cycles on each Sector.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV160AB-90BCP | 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY |
| EN29LV160AB-90BI | 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY |
| EN29LV160AB-90BIP | 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY |
| EN29LV160AT-70BCP | 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY |
| EN29LV160AT-70BI | 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV160AT-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160A Series, 16 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash |
| EN29LV160BB-70BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash 制造商:Eon Silicon Solution Inc 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash |
| EN29LV160BT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash |
| EN29LV160CB-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:FLASH, 3V Read Program Erase 16 Megabit (2M x 8 / 1M x 16) 70ns TSOP |
| EN29LV320AT-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV320A Series, 32 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash |
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