參數(shù)資料
型號(hào)： EN29F512-90TIP
廠商： Electronic Theatre Controls, Inc.
英文描述： 512 Kbit (64K x 8-bit) 5V Flash Memory
中文描述： 512千位（64K的× 8位）5V的快閃記憶體
文件頁(yè)數(shù)： 1/35頁(yè)
文件大?。?/td> 429K
代理商： EN29F512-90TIP
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/10/20
EN29F512
FEATURES
5.0V operation for read/write/erase
operations
Fast Read Access Time
- 45ns, 55ns, 70ns, and 90ns
Sector Architecture:
- 4 uniform sectors of 16Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within
individual sectors
High performance program/erase speed
- Byte program time: 7μs typical
- Sector erase time: 300ms typical
- Chip erase time: 1.5s typical
Low Standby Current
- 1μA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 12mA typical active read current
- 30mA program/erase current
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
0.23 μm triple-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin 8mm x 20mm TSOP (Type 1)
- 32-pin 8mm x 14mm TSOP (Type 1)
Commercial and Industrial Temperature
Ranges
GENERAL DESCRIPTION
The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized
into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of
16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29F512 has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (
W E
)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
EN29F512
512 Kbit (64K x 8-bit) 5V Flash Memory
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