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參數(shù)資料
| 型號(hào)： | EN29F080 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 8 Megabit (1024K x 8-bit) Flash Memory |
| 中文描述： | 8兆位（1024K × 8位）閃存 |
| 文件頁數(shù)： | 1/37頁 |
| 文件大?。?/td> | 214K |
| 代理商： | EN29F080 |
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FEATURES
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Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
1
EN29F080
Rev. C, Issue Date: 2001/07/05
5.0V
±
10%, single power supply operation
- Minimizes system level power requirements
Manufactured on 0.35 μm process technology
High performance
- Access times as fast as 45 ns
Low power consumption
- 25 mA typical active read current
- 30 mA typical program/erase current
- 1 μA typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- 16 uniform sectors of 64Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Group sector protection:
Hardware method of locking of sector groups
to prevent any program or erase operations
within that sector group
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors
High performance program/erase speed
- Byte program time: 10μs typical
- Sector erase time: 500ms typical
- Chip erase time: 16s typical
Low Standby Current
- 1μA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 30mA active read current
- 30mA program/erase current
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle
bits feature
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
0.35 μm double-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
>100K program/erase endurance cycle
Ready/Busy# output (RY/BY#)
- Provides a hardware method for detecting
program or erase cycle completion.
Hardware reset pin (Reset#)
- Resets internal state machine to read mode
GENERAL DESCRIPTION
The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized
into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of
64Kbytes each. Any byte can be programmed typically in 10μs. The EN29F080 features 5.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29F080 has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (
W E
)
controls, which eliminate bus contention issues. This device is designed to allow either single
(or
multiple) Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
EN29F080
8 Megabit (1024K x 8-bit) Flash Memory
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29F08045S | 8 Megabit (1024K x 8-bit) Flash Memory |
| EN29F08045TI | 8 Megabit (1024K x 8-bit) Flash Memory |
| EN29F08070S | 8 Megabit (1024K x 8-bit) Flash Memory |
| EN29F08070SI | 8 Megabit (1024K x 8-bit) Flash Memory |
| EN29F08070T | 8 Megabit (1024K x 8-bit) Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29F08045S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit) Flash Memory |
| EN29F08045SI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit) Flash Memory |
| EN29F08045T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit) Flash Memory |
| EN29F08045TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit) Flash Memory |
| EN29F08050S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8 Megabit (1024K x 8-bit) Flash Memory |
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