參數(shù)資料
型號(hào)： EN29F002B-45TI
廠商： Electronic Theatre Controls, Inc.
英文描述： 2 Megabit (256K x 8-bit) Flash Memory
中文描述： 2兆位（256K × 8位）閃存
文件頁(yè)數(shù)： 1/32頁(yè)
文件大?。?/td> 267K
代理商： EN29F002B-45TI
FEATURES
4800 Great America Parkway, Suite 202
Santa Clara, CA 95054
Tel: 408-235-8680
Fax: 408-235-8685
1
EN29F002 / EN29F002N
Rev. C, Issue Date: 2001/07/05
5.0V ± 10% for both read/write operation
Read Access Time
- 45ns, 55ns, 70ns, and 90ns
Fast Read Access Time
- 70ns with C
load
= 100pF
- 45ns, 55ns with C
load
= 30pF
Sector Architecture:
One 16K byte Boot Sector, Two 8K byte
Parameter Sectors, one 32K byte and
three 64K byte main Sectors
Boot Block Top/Bottom Programming
Architecture
High performance program/erase speed
- Byte program time: 10μs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
Low Standby Current
- 1μA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 30mA active read current
- 30mA program / erase current
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle
bits feature
Hardware
RESET
Pin
(n/a for EN29F002N)
Single Sector and Chip Erase
Sector Protection / Temporary Sector
Unprotect (
RESET
= V
ID
)
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another sector during
Erase Suspend Mode
0.4 μm double-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
Commercial and Industrial Temperature
Ranges
GENERAL DESCRIPTION
The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with
top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main
sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typicall
y at 10μs. The EN29F002 /
EN29F002N features 5.0V voltage read and write operation. The access times are as fast as 45ns to eliminate
the need for WAIT states in high-performance microprocessor systems.
The EN29F002 / EN29F002N has separate Output Enable (
OE
), Chip Enable (
CE
), and Write
Enable (
W E
) controls which eliminate bus contention issues. This device is designed to allow
either single sector or full chip erase operation, where each sector can be individually protected
against program/erase operations or temporarily unprotected to erase or program. The device can
sustain
a
minimum
of
100K
program/erase
cycles
on
each
sector.
EN29F002 / EN29F002N
2 Megabit (256K x 8-bit) Flash Memory
相關(guān)PDF資料
PDF描述
EN29F002B-55J 2 Megabit (256K x 8-bit) Flash Memory
EN29F002B-55JI 2 Megabit (256K x 8-bit) Flash Memory
EN29F002B-55P 2 Megabit (256K x 8-bit) Flash Memory
EN29F002B-55PI 2 Megabit (256K x 8-bit) Flash Memory
EN29F002B-55T 2 Megabit (256K x 8-bit) Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29F002B-55J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory
EN29F002B-55JI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory
EN29F002B-55P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory
EN29F002B-55PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory
EN29F002B-55T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory
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