參數(shù)資料
型號： EN29F002AB-90JIP
廠商： Electronic Theatre Controls, Inc.
英文描述： Octal Buffer/Line Driver with 3-STATE Outputs
中文描述： 2兆位（256K × 8位）閃存
文件頁數(shù)： 1/35頁
文件大?。?/td> 431K
代理商： EN29F002AB-90JIP
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
FEATURES
5.0V ± 10% for both read/write operation
Read Access Time
- 45ns, 55ns, 70ns, and 90ns
Fast Read Access Time
- 70ns with C
load
= 100pF
- 45ns, 55ns with C
load
= 30pF
Sector Architecture:
One 16K byte Boot Sector, Two 8K byte
Parameter Sectors, one 32K byte and
three 64K byte main Sectors
Boot Block Top/Bottom Programming
Architecture
High performance program/erase speed
- Byte program time: 10μs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
Low Standby Current
- 1μA CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 30mA active read current
- 30mA program / erase current
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle
bits feature
Hardware
RESET
Pin
(n/a on EN29F002AN)
Single Sector and Chip Erase
Sector Protection / Temporary Sector
Unprotect (
RESET
= V
ID
)
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another sector during
Erase Suspend Mode
0.23 μm triple-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
Commercial and Industrial Temperature
Ranges
GENERAL DESCRIPTION
The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with
top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main
sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10μs. The EN29F002A /
EN29F002AN features 5.0V voltage read and write operation. The access times are as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29F002A / EN29F002AN has separate Output Enable (
OE
), Chip Enable (
CE
), and Write
Enable (
W E
) controls which eliminate bus contention issues. This device is designed to allow
either single sector or full chip erase operation, where each sector can be individually protected
against program/erase operations or temporarily unprotected to erase or program. The device can
sustain
a
minimum
of
100K
program/erase
cycles
on
each
sector.
EN29F002A / EN29F002AN
2 Megabit (256K x 8-bit) Flash Memory
相關(guān)PDF資料
PDF描述
EN29F002AB-90PC Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOIC-Wide; No of Pins: 20; Container: Rail
EN29F002AB-90PCP Octal Buffer/Line Driver with 3-STATE Outputs
EN29F002AB-90PI Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOIC-Wide; No of Pins: 20; Container: Tape &amp; Reel
EN29F002AB-90PIP Octal Buffer/Line Driver with 3-STATE Outputs
EN29F002AB-90TC Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOP; No of Pins: 20; Container: Rail
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN29F002AB-90PC 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:2 Megabit (256K x 8-bit) Flash Memory
EN29F002AB-90PCP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:2 Megabit (256K x 8-bit) Flash Memory
EN29F002AB-90PI 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:2 Megabit (256K x 8-bit) Flash Memory
EN29F002AB-90PIP 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:2 Megabit (256K x 8-bit) Flash Memory
EN29F002AB-90TC 制造商:EON 制造商全稱:Eon Silicon Solution Inc. 功能描述:2 Megabit (256K x 8-bit) Flash Memory
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