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參數(shù)資料
| 型號(hào)： | EMZ2 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power management (dual transistors) |
| 中文描述： | 電源管理（）雙晶體管 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | EMZ2 |
EMZ2 / UMZ2N / FMY4A / IMZ2A
Transistors
!
Electrical characteristics
(Ta=25
°
C)
2/2
Tr
1
Parameter
Symbol
BV
CBO
Min.
60
Typ.
Max.
Unit
V
Conditions
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
BV
CEO
50
6
120
0.1
0.1
0.5
560
5
V
V
μ
A
μ
A
V
MHz
pF
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
60V
V
EB
=
6V
I
C
/I
B
=
50mA/
5mA
V
CE
=
6V , I
C
=
1mA
V
CE
=
12V , I
E
= 2mA , f = 100MHz
V
CB
=
12V , I
E
= 0A , f = 1MHz
I
C
=
50
μ
A
140
4
Tr
2
Parameter
Symbol
BV
CBO
Min.
60
Typ.
Max.
Unit
V
Conditions
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
BV
CEO
50
7
120
0.1
0.1
0.4
560
3.5
V
V
μ
A
μ
A
V
MHz
pF
I
C
= 1mA
I
E
= 50
μ
A
V
CB
= 60V
V
EB
= 7V
I
C
/I
B
= 50mA/5mA
V
CE
= 6V , I
C
= 1mA
V
CE
= 12V , I
E
=
2mA , f = 100MHz
V
CB
= 12V , I
E
= 0A , f = 1MHz
I
C
= 50
μ
A
180
2
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Transition frequency of the device.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EMZ2_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management (dual transistors) |
| EMZ2001-014 | 制造商:JVC Worldwide 功能描述:ADAPTOR PLUG |
| EMZ2T2R | 功能描述:兩極晶體管 - BJT NPN/PNP 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| EMZ5.1MTL | 功能描述:穩(wěn)壓二極管 ZENER ARRAY RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| EMZ6.8E | 制造商:ROHM 制造商全稱:Rohm 功能描述:Zener diode |
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