參數(shù)資料
型號(hào)： EMX3
廠商： Rohm CO.,LTD.
英文描述： General purpose (dual transistors)
中文描述： 通用（雙晶體管）
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 68K
代理商： EMX3
EMX2 / EMX3 / UMX2N / UMX3N
/
IMX2 / IMX3
Transistors
General purpose (dual transistors)
EMX2 / EMX3 / UMX2N / UMX3N / IMX2 / IMX3
!
Features
1) Two 2SC2412AK chips in a EMT or UMT or SMT package.
!
Equivalent circuits
(1)
(2)
(3)
(4) (5)
(6)
(6)
(5)
(4)
(3) (2)
(1)
(1)
(2)
(3)
(4)
(5)
(6)
(6)
(5)
(4)
(3)
(2)
(1)
EMX2 / UMX2N
IMX2
EMX3 / UMX3N
IMX3
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
7
150
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMX2 / EMX3 / UMX2N / UMX3N
IMX2 / IMX3
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
60
50
7
120
Typ.
180
2
Max.
0.1
0.1
0.4
560
3.5
Unit
V
V
V
μ
A
μ
A
V
MHz
pF
Conditions
Transition frequency
Output capacitance
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
60V
V
EB
=
7V
I
C
/I
B
=
50mA/5mA
V
CE
=
6V, I
C
=
1mA
V
CE
=
12V, I
E
=
2mA, f
=
100MHz
V
CB
=
12V, I
E
=
0mA, f
=
1kHz
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
EMX2
EMT6
X2
T2R
8000
EMX3
EMT6
X3
T2R
8000
UMX2N
UMT6
X2
TR
3000
UMX3N
UMT6
X3
TR
3000
IMX2
SMT6
X2
T108
3000
IMX3
SMT6
X3
T108
3000
Basic ordering unit (pieces)
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