參數(shù)資料
型號(hào): EMP25P12B
英文描述: 60V/2.5A Peak, High Frequency Full Bridge FET Driver; Temperature Range: -40°C to 85°C; Package: 20-PDIP
中文描述: 可編程solated智能功率模塊。 1 25A條。 1200伏。三相逆變器為15Kw的工業(yè)和伺服電機(jī)
文件頁數(shù): 10/15頁
文件大?。?/td> 1132K
代理商: EMP25P12B
www.irf.com
4
EMP25P12B
I27149 01/03
Switching Characteristics:
For proper operation the device should be used within the recommended conditions.
TJ = 25°C (unless otherwise specified)
Symbol
Parameter Definition
Min
Typ
Max
Units
Test Conditions
Fig.
Qg
Total Gate Charge (turn on)
169
254
Qge
Gate – Emitter Charge (turn on)
19
29
Qgc
Gate – Collector Charge (turn on)
82
123
nC
IC = 25A
VCC = 600V
VGE = 15V
23
CT1
Eon
Turn on Switching Loss
1.9
3.6
IC = 25A, VCC = 600V, TJ = 25 C
CT4
Eoff
Turn off Switching Loss
1.3
2.0
VGE = 15V, RG =20
, L = 200H
WF1
Etot
Total Switching Loss
3.2
5.6
mJ
Tail and Diode Rev. Recovery included
WF2
Eon
Turn on Switching Loss
2.7
4.6
Eoff
Turn off Switching Loss
2.0
2.3
Etot
Total Switching Loss
4.7
6.9
mJ
IC = 25A, VCC = 600V, TJ = 125 C
VGE = 15V, RG =20
, L = 200H
Tail and Diode Rev. Recovery included
13,
15
CT4
WF1
WF2
td (on)
Turn on delay time
192
210
14,16
Tr
Rise time
33
49
IC = 25A, VCC = 600V, TJ = 125 C
CT4
td (off)
Turn off delay time
213
227
WF1
Tf
Fall time
210
379
ns
VGE = 15V, RG =20
, L = 200H
WF2
Cies
Input Capacitance
2200
VCC = 30V
Coes
Output Capacitance
210
VGE = 0V
Cres
Reverse Transfer Capacitance
85
PF
f = 1MHz
22
TJ = 150 C, I C =100A, VGE = 15V to 0V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 1000V, Vp = 1200V, RG = 5
4
CT2
TJ = 150 C, VGE = 15V to 0V
CT3
SCSOA
Short Circuit Safe Operating Area
10
s
VCC = 1000V, Vp= 1200V, RG = 5
WF4
EREC
Diode reverse recovery energy
1820
2400
J
TJ = 125 C
Trr
Diode reverse recovery time
300
ns
IF= 25A, VCC = 600V,
Irr
Peak reverse recovery current
25
32
A
VGE = 15V, RG =20
, L = 200H
17,18
19,20
21
CT4
WF3
RthJC_T
Each IGBT to copper plate thermal resistance
0.65
C/W
RthJC_D
Each Diode to copper plate thermal resistance
1.05
C/W
RthC-H
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
0.03
C/W
24
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