- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295881 > EMIF02-600FU7RL (STMICROELECTRONICS) 1 FUNCTIONS, FERRITE CHIP PDF資料下載
參數(shù)資料
| 型號： | EMIF02-600FU7RL |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 數(shù)據(jù)傳輸濾波器 |
| 英文描述： | 1 FUNCTIONS, FERRITE CHIP |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 135K |
| 代理商： | EMIF02-600FU7RL |
ESD PROTECTION
In addition to its filtering function, the EMIF02-600FU7 is particularly optimized to perform ESD protection.
ESD protection is based on voltage clamping which can be calculated by :
VCL =VBR +Rd.IPP
This protection function is splitted in 2 stages. As shown in figure A3, the ESD strikes are clamped by the first stage S1 and
then its remaining overvoltage is applied to the second stage through the resistor R. Such a configuration makes the output
voltage Vout very low.
To have a good approximation of the remaining voltages at both Vin and Vout stages, we provide the typical dynamical
resistance value Rd. By taking into account these following hypothesis : R>>Rd, RG>>Rd and Rload>>Rd, it gives these
formulas:
Vin
=
Rg.Vbr
+Rd.Vg
Rg
Vout
=
R.Vbr
+Rd.Vin
R
The results of the calculation done for VG=8kV, RG=330
(IEC1000-4-2 standard) and VBR=7V (typ.) give:
Vin = 20.33 V
Vout = 7.01 V
This confirms the very low remaining voltage across the device to be protected. It is also important to note that in this
approximation the parasitic inductance effect was not taken into account. This could be few tenths of volts during few ns at
the Vin side. This parasitic effect is not present at the Vout side due the low current involved after the resistance R.
The measurements shown here after illustrate very clearly (Fig. A5a) the high efficiency of the ESD protection :
- no influence of the parasitic inductances on Vout stage
- Vout clamping voltage very close to VBR
Fig A3 : ESD clamping behavior
ESD
Surge
Vin
Vout
Rload
S1
S2
Rg
R
Rd
Vbr
Vg
Device to be protected
EMIF02-600FU7
Fig A4 : Measurement conditions
GND
LOW-PASS FILTER
Vin
Vout
GND
EMIF02-600FU7
4/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EMIF02-600FU7 | 1 FUNCTIONS, FERRITE CHIP |
| EMK11G2H-19.608M | CRYSTAL OSCILLATOR, CLOCK, 19.608 MHz, LVCMOS OUTPUT |
| EMK11G2H-23.1245M | CRYSTAL OSCILLATOR, CLOCK, 23.1245 MHz, LVCMOS OUTPUT |
| EMK11G2H-27.665MTR | CRYSTAL OSCILLATOR, CLOCK, 27.665 MHz, LVCMOS OUTPUT |
| EMK11H2J-FREQTR | CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 125 MHz, LVHCMOS OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EMIF02746 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| EMIF02-AV01F3 | 功能描述:電磁干擾濾波器 2-Line EMI Filter AV ESD Protection RoHS:否 制造商:STMicroelectronics 電容:12 pF 電路類型: 最大直流電流: 最大直流電阻: 電壓額定值:6 V 容差: 端接類型:SMD/SMT 工作溫度范圍:- 30 C to + 85 C 系列:EMIF03 |
| EMIF02-AV01F3_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Dual audio and video line IPADa?￠, EMI filter and ESD protection |
| EMIF02-MIC01F2 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2-line IPAD, EMI filter including ESD protection |
| EMIF02-MIC02 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 LINES EMI FILTER AND ESD PROTECTION |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。