參數(shù)資料
型號(hào)： EMH3
廠商： Rohm CO.,LTD.
英文描述： General purpose (dual digital transistors)
中文描述： 通用（雙數(shù)字晶體管）
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 189K
代理商： EMH3
EMH3 / UMH3N / IMH3A
Transistors
z
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
Limits
Unit
V
CBO
50
V
V
CEO
50
V
V
EBO
5
V
I
C
100
mA
Tj
150
°
C
Tstg
55~
+
150
°
C
Pc
EMH3,UMH3N
150 (TOTAL)
mW
IMH3A
300 (TOTAL)
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Collector
power
dissipation
z
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
Min.
50
50
5
100
3.29
250
4.7
0.5
0.5
600
0.3
6.11
V
I
C
=50
μ
A
I
C
=1mA
I
E
=50
μ
A
V
CB
=50V
V
EB
=4V
V
CE
=5V, I
C
=1mA
V
CE
=10mA, I
E
=
5mA, f=100MHz
I
C
/I
B
=5mA/0.25mA
V
V
μ
A
μ
A
V
k
Typ.
Max.
Unit
Conditions
f
T
250
MHz
Transition frequency of the device
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Input resistance
z
Electrical characteristic curves
D
F
COLLECTOR CURRENT : I
C
(A)
V
CE
=
5V
1
μ
200
μ
500
μ
1m
2m
5m 10m 20m
50m100m
1k
500
200
100
50
20
10
5
2
Ta=100
°
C
25
°
C
40
°
C
Fig.1 DC current gain vs. collector
current
100
μ
200
μ
500
μ
1m
2m
5m 10m 20m
50m100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
C
C
COLLECTOR CURRENT : I
C
(A)
Ta=100
°
C
25
°
C
40
°
C
l
C
/l
B
=20
Fig.2 Collector-emitter saturation
voltage vs. collector current
Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
For the very latest product data and news visit angliac.com
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