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參數(shù)資料
| 型號： | EMF33 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power management, Dual-chip Bipolar Transistor |
| 中文描述： | 電源管理，雙雙極晶體管芯片 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 57K |
| 代理商： | EMF33 |
EMF33
Transistors
z
Electrical characteristics
(Ta=25
°
C)
<Tr1>
2/2
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R1
R2/R1
Characteristics of built-in transistor.
Min.
2.5
140
0.7
8
0.3
300
6.4
0.5
1.3
12
V
V
V
CC
=
5V, I
O
=
100
μ
A
V
O
=
0.3V, I
O
=
20mA
V
O
=
100mA, I
I
=
5mA
V
I
=
5V
V
CC
=
12V, V
I
= 0V
V
O
=
5V, I
O
=
100mA
V
CE
=
10V, I
E
= 5mA, f=100MHz
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
60
260
1
10
mV
mA
uA
k
Resistance ratio
Parameter
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
Y
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Min.
30
0.8
20
5
7
13
9
4
15
35
80
80
±1
1.0
1.5
8
13
μ
A
μ
A
V
ms
pF
pF
pF
ns
ns
ns
ns
V
GS
= ±20V, V
DS
=0V
I
D
= 10
μ
A, V
GS
=0A
V
DS
= 30V, V
GS
=0V
V
DS
= 3V, I
D
=100
μ
A
I
D
= 10mA, V
GS
= 4V
I
D
= 1mA, V
GS
= 2.5V
V
DS
= 3V, I
D
= 10mA
V
DS
= 5V
V
GS
= 0V
f=1MHz
Typ.
Max.
Unit
Conditions
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
<Tr2>
R
DS(on)
Static drain-source on-resistance
Forward transfer admittance
Input capacitance
I
D
= 10mA
V
DD
= 5V
V
GS
= 5V
R
L
= 500
R
GS
= 10
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EMF33_08 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management, Dual-chip Bipolar Transistor |
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| EM-F343B-O | 制造商:Lanner Electronics Inc 功能描述: |
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