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參數(shù)資料
| 型號(hào)： | EMD3T2R |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | EMD3T2R |
EMD3 / UMD3N / IMD3A
Transistors
General purpose
(dual digital transistors)
Rev.A
1/3
EMD3 / UMD3N / IMD3A
z
Features
1) Both the DTA114E chip and DTC114E chip in a EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
z
Structure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “
” sign on DTr
2
values for the PNP
type have been omitted.
z
Equivalent circuits
EMD3 / UMD3N
IMD3A
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
R
2
(6)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
R
1
R
2
R
1
R
2
=10k
R
1
=10k
R
2
=10k
R
1
=10k
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
Limits
Unit
V
CC
50
V
10
V
V
IN
40
I
O
50
mA
I
C (Max.)
100
Tj
150
C
Tstg
55
～+
150
C
Pd
EMD3, UMD3N
150 (TOTAL)
mW
IMD3A
300 (TOTAL)
1
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Power
dissipation
z
External dimensions
(Unit : mm)
ROHM : EMT6
EMD3
ROHM : UMT6
EIAJ : SC-88
UMD3N
Abbreviated symbol : D3
Abbreviated symbol : D3
Abbreviated symbol : D3
ROHM : SMT6
EIAJ : SC-74
IMD3A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
0
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0
0
0
0
1
1
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