參數(shù)資料
型號(hào): EMB4
廠商: Rohm CO.,LTD.
英文描述: General purpose (dual digital transistors)
中文描述: 通用(雙數(shù)字晶體管)
文件頁數(shù): 1/2頁
文件大小: 65K
代理商: EMB4
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
Transistors
FMA4A / IMB4A / IMB8A
General purpose (dual digital transistors)
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N /
FMA4A / IMB4A / IMB8A
!
Features
1) Two DTA114T chips in a EMT or UMT or SMT package.
!
Equivalent circuit
EMA4 / UMA4N
R
1
R
1
(1)
(2)
(3)
(4)
(5)
EMB4 / UMB4N
(3)
(2)
(1)
(4)
(5)
(6)
R
1
R
1
UMB8N
(3)
(2)
(1)
(4) (5)
(6)
R
1
R
1
FMA4A
(3)
(2)
(1)
(4)
(5)
R
1
R
1
IMB4A
(4)
(5)
(6)
(3)
(2)
(1)
R
1
R
1
IMB8A
(4)
(5)
(6)
(3) (2)
(1)
R
1
R
1
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
50
50
5
100
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N
FMA4A / IMB4A / IMB8A
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
50
50
5
100
7
Typ.
250
250
10
Max.
0.5
0.5
0.3
600
13
Unit
V
V
V
μ
A
μ
A
V
MHz
k
Conditions
Transition frequency
Input resistance
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
I
C
/I
B
=
10mA/
1mA
V
CE
=
5V, I
C
=
1mA
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
UMA4N
UMT5
A4
TR
3000
EMA4
EMT5
A4
T2R
8000
EMB4
EMT6
B4
T2R
8000
UMB8N
UMT6
B8
TR
3000
FMA4A
SMT5
A4
T148
3000
IMB4A
SMT6
B4
T110
3000
IMB8A
SMT6
B8
T108
3000
UMB4N
UMT6
B4
TN
3000
Basic ordering unit (pieces)
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