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參數(shù)資料
| 型號： | EM6K1 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (30V, 0.1A) |
| 中文描述： | 小開關(guān)（30V的，0.1A） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 85K |
| 代理商： | EM6K1 |
EM6K1
Transistor
50
0
25
150
0
3
6
9
CHANNEL TEMPERATURE : Tch (
°
C)
S
O
D
(
)
)
25
50
75
100
125
2
1
4
5
7
8
V
GS
=4V
Pulsed
I
D
=100mA
I
D
=50mA
Fig.7 Static Drain-Source On-State
Resistance vs.
Channel Temperature
0.0001
0.001
0.01
0.02
0.5
F
A
Y
(
S
DRAIN CURRENT : I
D
(A)
0.005
0.0002
0.0005 0.001
0.002
0.005
0.01
0.02
0.05
0.05
0.1
0.2
0.1
0.2
0.5
0.002
V
DS
=3V
Pulsed
Ta=
25
°
C
75
°
C
125
°
C
25
°
C
Fig.8 Forward Transfer Admittance
vs. Drain Current
200m
R
D
SOURCE-DRAIN VOLTAGE : V
SD
(V
)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
V
GS
=0V
Pulsed
Ta=125
°
C
75
°
C
25
°
C
25
°
C
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage (
Ι
)
200m
R
D
A
SOURCE-DRAIN VOLTAGE : V
SD
(
V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Ta=25
°
C
Pulsed
V
GS
=4V
0V
Fig.10 Reverse Drain Current vs.
Source-Drain Voltage (
ΙΙ
)
0.1
1
2
50
C
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.5
0.2
0.5
1
2
5
10
20
50
5
10
20
C
iss
C
oss
C
rss
°
C
f==25
Z
V
Pul=0V
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
0.1
10
20
500
S
DRAIN CURRENT : I
D
(mA)
5
0.2
0.5
1
2
5
10
20
50
50
100
200
1000
2
100
Ta
=25
°
C
V
DD
V
GS
R
G
=5V
t
d(off)
t
r
t
d(on)
t
f
Fig.12 Switching Characteristics
!
Switching characteristics measurement circuits
Fig.13 Switching Time Test Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
90%
50%
10%
90%
10%
50%
10%
Pulse Width
V
GS
V
DS
90%
t
f
t
off
t
d(off)
t
r
t
on
t
d(on)
Fig.14 Switching Time Waveforms
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